j/sst111 series siliconix s-52424erev. d, 14-apr-97 1 n-channel jfets j111 sst111 j112 sst112 j113 sst113 product summary part number v gs(off) (v) r ds(on) max ( ) i d(off) typ (pa) t on typ (ns) j/sst111 3 to 10 30 5 4 j/sst112 1 to 5 50 5 4 j/sst113 3 100 5 4 features benefits applications low on-resistance: 111 < 30 fast switchinget on : 4 ns low leakage: 5 pa low capacitance: 3 pf low insertion loss low error voltage high-speed analog circuit performance negligible aoff-error,o excellent accuracy good frequency response, low glitches eliminates additional buffering analog switches choppers sample-and-hold normally aono switches current limiters description the j/sst111 series consists of all-purpose analog switches designed to support a wide range of applications. the j/sst113 are useful in a high-gain amplifier mode. the j series, to-226aa (to-92) plastic package, provides low cost, while the sst series, to236 (sot-23) package, provides surface-mount capability. both the j and sst series are available in tape-and-reel for automated assembly (see packaging information). for similar products in to-206aa(to-18) packaging, see the 2n/pn/sst4391 series, 2n4856a/4857a/4858a, and 2n5564/5565/5566 (duals) data sheets. to-226aa (to-92) top view j111 j112 j113 d g s 1 2 3 d s g to-236 (sot-23) 2 3 1 top view sst111 (c1)* sst112 (c2)* sst113 (c3)* *marking code for to-236 updates to this data sheet may be obtained via facsimile by calling siliconix faxback, 1-408-970-5600. please request faxback document #70232. applications information may also be obtained via faxback, request document #70598.
j/sst111 series 2 siliconix s-52424erev. d, 14-apr-97 absolute maximum ratings gate-drain, gate-source voltage 35 v . . . . . . . . . . . . . . . . . . . . . . . . . . gate current 50 ma . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . lead temperature ( 1 / 16 o from case for 10 seconds) 300 c . . . . . . . . . . storage temperature 55 to 150 c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . operating junction temperature 55 to 150 c . . . . . . . . . . . . . . . . . . . . power dissipation a (to-236) 350 mw . . . . . . . . . . . . . . . . . . . . . . . . . (to-226aa) 360 mw . . . . . . . . . . . . . . . . . . . . . . notes a. derate 2.8 mw/ c above 25 c specifications a limits j/sst111 j/sst112 j/sst113 parameter symbol test conditions typ b min max min max min max unit static gate-source breakdown voltage v (br)gss i g = 1 a , v ds = 0 v 55 35 35 35 v gate-source cutoff voltage v gs(off) v ds = 5 v, i d = 1 a 3 10 1 5 3 saturation drain current c i dss v ds = 15 v, v gs = 0 v 20 5 2 ma gate reverse current i gss v gs = 15 v, v ds = 0 v 0.005 1 1 1 na g a t e r everse c urren t i gss t a = 125 c 3 n a gate operating current i g v dg = 15 v, i d = 10 ma 5 pa drain cutoff current i d(off) v ds = 5 v, v gs = v 0.005 1 1 1 na d ra i n c u t o f f c urren t i d(off) t a = 125 c 3 n a drain-source on-resistance r ds(on) v gs = 0 v, v ds = 0.1 v 30 50 100 gate-source forward voltage v gs(f) i g = 1 ma , v ds = 0 v 0.7 v dynamic common-source forward transconductance g fs v ds = 20 v, i d = 1 ma f1kh 6 ms common-source output conductance g os ds , d f = 1 khz 25 s drain-source on-resistance r ds(on) v gs = 0 v, i d = 0 ma f = 1 khz 30 50 100 common-source input capacitance c iss v ds = 0 v, v gs = v f1mh 7 12 12 12 pf common-source reverse transfer capacitance c rss ds , gs f = 1 mhz 3 5 5 5 p f equivalent input noise voltage e n v dg = 10 v, i d = 1 ma f = 1 khz 3 nv M hz switching turn - on t ime t d(on) 2 t urn- o n t i me t r v dd = 10 v, v gs(h) = 0 v s s it hi ci it 2 ns turn - of f time t d(off) gs( ) see switching circuit 6 ns turn - of f t ime t f 15 notes a. t a = 25 c unless otherwise noted. ncb b. typical values are for design aid only, not guaranteed nor subject to production testing. c. pulse test: pw 300 s duty cycle 3%.
j/sst111 series siliconix s-52424erev. d, 14-apr-97 3 typical characteristics 160 120 on-resistance and drain current vs. gate-source cutoff voltage on-resistance vs. drain current 100 0 10 0 200 160 0 saturation drain current (ma) i dss r ds i dss r ds @ i d = 1 ma, v gs = 0 i dss @ v ds = 20 v, v gs = 0 100 0 1 10 100 v gs(off) = 2 v 4 v 8 v t a = 25 c on-resistance vs. temperature 200 55 25 125 0 15 85 i d = 1 ma r ds changes x 0.7%/ c v gs(off) = 2 v 4 v 8 v turn-on switching 5 0 10 4 3 2 1 0 t r switching time (ns) t d(on) @ i d = 3 ma t d(on) @ i d = 12 ma t r approximately independent of i d v dd = 5 v, r g = 50 v gs(l) = 10 v turn-off switching 30 010 24 18 12 6 0 t f @ v gs(off) = 2 v t f @ v gs(off) = 8 v t d(off) t d(off) independent of device v gs(off) v dd = 5 v, v gs(l) = 10 v capacitance vs. gate-source voltage 30 20 24 18 12 6 0 capacitance (pf) f = 1 mhz c iss @ v ds = 0 v c rss @ v ds = 0 v 0 v gs(off) gate-source cutoff voltage (v) t a temperature ( c) v gs gate-source voltage (v) v gs(off) gate-source cutoff voltage (v) i d drain current (ma) i d drain current (ma) 80 60 40 20 80 40 80 60 40 20 2 4 6 8 35 120 80 40 5 45 65 105 2 4 6 8 2 4 6 8 4 8 12 16 switching time (ns) r ds(on) drain-source on-resistance ( ) r ds(on) drain-source on-resistance ( ) r ds(on) drain-source on-resistance ( )
j/sst111 series 4 siliconix s-52424erev. d, 14-apr-97 typical characteristics (cont'd) 1 pa noise voltage vs. frequency 100 10 1 10 100 1 k 100 k 10 k i d = 10 ma forward transconductance and output conductance vs. gate-source cutoff voltage 50 0 0 2 10 500 250 0 g fs forward transconductance (ms) s) g output conductance ( g fs g os g fs and g os @ v ds = 20 v v gs = 0 v, f = 1 khz gate leakage current 030 1 na 100 pa 10 pa 0.1 pa gate leakage i g t a = 125 c t a = 25 c 1 ma i gss @ 25 c 10 na i d = 10 ma common-gate input admittance 100 10 1 0.1 100 1000 200 500 (ms) g ig b ig v dg = 10 v i d = 10 ma t a = 25 c common-gate forward admittance common-gate reverse admittance 100 10 1 0.1 100 1000 200 500 (ms) g fg b fg g fg v dg = 10 v i d = 10 ma t a = 25 c 10 1.0 0.1 0.01 100 1000 200 500 v dg = 10 v i d = 10 ma t a = 25 c g rg b rg +g rg (ms) v dg drain-gate voltage (v) v gs(off) gate-source cutoff voltage (v) f frequency (hz) f frequency (mhz) f frequency (mhz) f frequency (mhz) 40 30 20 10 4 6 8 i gss @ 125 c 10 ma 1 ma 6121824 v ds = 10 v i d = 1 ma nv e n / hz ) ( noise voltage
j/sst111 series siliconix s-52424erev. d, 14-apr-97 5 typical characteristics (cont'd) drain current (ma) i d output characteristics 100 010 80 60 40 20 0 v ds drain-source voltage (v) 24 68 common-gate output admittance 100 10 1 0.1 100 1000 200 500 (ms) v dg = 10 v i d = 10 ma t a = 25 c f frequency (mhz) drain current (ma) i d output characteristics 40 0 1.0 32 24 16 8 0 v ds drain-source voltage (v) 0.2 0.4 0.6 0.8 drain current (ma) i d transfer characteristics 100 05 80 60 40 20 0 v gs gate-source voltage (v) 1 2 3 4 g og b og v gs = 0 v 0.5 1.0 1.5 2.0 2.5 v gs(off) = 4 v v gs(off) = 4 v v gs = 0 v 0.5 1.0 1.5 2.0 2.5 3.0 v gs(off) = 4 v t a = 55 c 25 c 125 c v ds = 20 v switching time test circuit j/sst111 j/sst112 j/sst113 v gs(l) 12 v 7 v 5 v r l * 800 1600 3200 i d(on) 12 ma 6 ma 3 ma *non-inductive input pulse sampling scope rise time < 1 ns fall time < 1 ns pulse width 100 ns prf 1 mhz rise time 0.4 ns input resistance 10 m input capacitance 1.5 pf 51 51 1 k v gs scope v dd r l out v gs(h) v gs(l)
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